ISO 14701:2011
2011-08
Résumé
ISO 14701:2011 specifies several methods for measuring the oxide thickness at the surfaces of (100) and (111) silicon wafers as an equivalent thickness of silicon dioxide when measured using X-ray photoelectron spectroscopy. It is only applicable to flat, polished specimens and for instruments that incorporate an Al or Mg X-ray source, a specimen stage that permits defined photoelectron emission angles and a spectrometer with an input lens that can be restricted to less than a 6° cone semi-angle. For thermal oxides in the range 1 nm to 8 nm thickness, using the best method described in the standard, uncertainties, at a 95 % confidence level, could typically be around 2 % and around 1 % at optimum. A simpler method is also given with slightly poorer, but often adequate, uncertainties.
Informations générales
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État actuel: AnnuléeDate de publication: 2011-08Stade: Annulation de la Norme internationale [95.99]
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Edition: 1
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Comité technique :ISO/TC 201/SC 7ICS :71.040.40
- RSS mises à jour
Cycle de vie
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Actuellement
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Révisée par
PubliéeISO 14701:2018