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ISO 14701:2011
© ISO 2024
ISO 14701:2011
Surface chemical analysis — X-ray photoelectron spectroscopy — Measurement of silicon oxide thickness
Версия 1
2011-08
В время отменен
Отозвано (Версия 1, 2011)

Тезис

ISO 14701:2011 specifies several methods for measuring the oxide thickness at the surfaces of (100) and (111) silicon wafers as an equivalent thickness of silicon dioxide when measured using X-ray photoelectron spectroscopy. It is only applicable to flat, polished specimens and for instruments that incorporate an Al or Mg X-ray source, a specimen stage that permits defined photoelectron emission angles and a spectrometer with an input lens that can be restricted to less than a 6° cone semi-angle. For thermal oxides in the range 1 nm to 8 nm thickness, using the best method described in the standard, uncertainties, at a 95 % confidence level, could typically be around 2 % and around 1 % at optimum. A simpler method is also given with slightly poorer, but often adequate, uncertainties.

Общая информация

  • Текущий статус
     : Отозвано
    Дата публикации
     : 2011-08
    Этап
    : Отмена международного стандарта [95.99]
  • Версия
     : 1
  • Технический комитет :
    ISO/TC 201/SC 7
    ICS :
    71.040.40 
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