ISO 14706:2014

Published (Edition 2, 2014)

This publication was last reviewed and confirmed in 2021. Therefore this version remains current.

ISO 14706:2014

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Abstract

ISO 14706:2014 specifies a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces. The method is applicable to the following: elements of atomic number from 16 (S) to 92 (U); contamination elements with atomic surface densities from 1 × 1010 atoms/cm2 to 1 × 1014 atoms/cm2; contamination elements with atomic surface densities from 5 × 108 atoms/cm2 to 5 × 1012 atoms/cm2 using a VPD (vapour-phase decomposition) specimen preparation method.

General information

Status
: Published

Publication date
: 2014-08

Stage
: International Standard confirmed [90.93]
Edition
: 2

Number of pages
: 25
Technical Committee :
ISO/TC 201

ICS :
71.040.40
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