Abstract
ISO 14706:2014 specifies a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces. The method is applicable to the following: elements of atomic number from 16 (S) to 92 (U); contamination elements with atomic surface densities from 1 × 1010 atoms/cm2 to 1 × 1014 atoms/cm2; contamination elements with atomic surface densities from 5 × 108 atoms/cm2 to 5 × 1012 atoms/cm2 using a VPD (vapour-phase decomposition) specimen preparation method.
General information
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Status: PublishedPublication date: 2014-08Stage: International Standard confirmed [90.93]
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Edition: 2Number of pages: 25
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Technical Committee :ISO/TC 201ICS :71.040.40
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Life cycle
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WithdrawnISO 14706:2000
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