Abstract
ISO 14237:2010 specifies a secondary-ion mass spectrometric method for the determination of boron atomic concentration in single-crystalline silicon using uniformly doped materials calibrated by a certified reference material implanted with boron. This method is applicable to uniformly doped boron in the concentration range from 1 x 1016 atoms/cm3 to 1 x 1020 atoms/cm3.
General information
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Status: PublishedPublication date: 2010-07Stage: International Standard confirmed [90.93]
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Edition: 2Number of pages: 19
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Technical Committee :ISO/TC 201/SC 6ICS :71.040.40
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Life cycle
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Previously
WithdrawnISO 14237:2000
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Now